governmentscienceTechnology

AMD Lands Major U.S. Government AI Deal to Power Next-Gen Supercomputers, Featuring Instinct MI355X & the Newer MI430 AI Chips

The U. S. Department of Energy (DoE) has reportedly collaborated with AMD on two new supercomputer projects, utilizing Team Red’s latest AI chips to address scientific challenges. AMD to Collaborate With the U. S. DoE To Build Out Two Cutting-Edge Supercomputers, With Record Deployment Times Based on a new report from Reuters, it seems like AMD has managed to secure a massive partnership with the U. S. DoE, which involves the construction of two new supercomputers, mainly for academic purposes. This marks a major deal for Team Red, which is currently in pursuit of having its tech stack widely adopted by customers in [.].

BusinesseconomyscienceTechnology

Former Stellantis CEO Predicts Tesla May Exit Car Industry Within 10 Years

TLDR Former Stellantis CEO Carlos Tavares predicts Tesla may not exist in 10 years and could abandon the car business as Elon Musk focuses on robots, SpaceX, or AI Chinese rival BYD overtook Tesla in global EV sales earlier this year, with Tesla’s China market share dropping from 16% in 2020 to 5% today Tesla [.] The post Former Stellantis CEO Predicts Tesla May Exit Car Industry Within 10 Years appeared first on CoinCentral.

BusinessscienceTechnology

Samsung Electronics VP Says ‘Process Miniaturization Alone Can Only Lead To Improvements Of 10-15%’ Emphasizing The Need To Explore New Approaches

The 2nm GAA process offers a significant performance and efficiency boost over Samsung’s older manufacturing processes, but the company’s Foundry Vice President says that shrinking the nodes only offers minor benefits and believes that there is a requirement to explore other alternatives. For this purpose, the Korean technology behemoth has proposed a ‘Design and Process Integration Optimization’ (DTCO) method, which researches modifications that can be applied to bolster the prowess of cutting-edge nodes. One area that Samsung has improved upon is transitioning from FinFET to GAA structures, maximizing current control capabilities, and allowing for its 2nm node to introduce a [.].