Save $175 with Samsung’s early (and unrivaled) Galaxy S25 FE Black Friday deal!
Save $175 with Samsung’s early (and unrivaled) Galaxy S25 FE Black Friday deal!
Tag: samsung
You can now talk to AI-powered Bixby on your 2025 Samsung TV
Samsung has announced the roll out of Samsung Vision AI Companion today. This artificial intelligence experience has been designed for TVs and is powered by Samsung’s AI-enhanced Bixby to deliver conversational user experiences. What this means is that you can ask Bixby questions about what you’re watching, find facts about an actor, ask it to [.] The post You can now talk to AI-powered Bixby on your 2025 Samsung TV appeared first on SamMobile.
Samsung’s difficult Galaxy S26 decision probably won’t please you
The Galaxy S26 series is only a few months away now, so naturally, there’s a lot of excitement about the new lineup. It was reported yesterday that the company is expected to unveil the device in February at an event in San Francisco. There have been grumblings of an expected price hike and it would [.] The post Samsung’s difficult Galaxy S26 decision probably won’t please you appeared first on SamMobile.
Future Pixel Feature Drop could make a major improvement to this unappreciated feature
Future Pixel Feature Drop could make a major improvement to this unappreciated feature
Samsung Electronics VP Says ‘Process Miniaturization Alone Can Only Lead To Improvements Of 10-15%’ Emphasizing The Need To Explore New Approaches
The 2nm GAA process offers a significant performance and efficiency boost over Samsung’s older manufacturing processes, but the company’s Foundry Vice President says that shrinking the nodes only offers minor benefits and believes that there is a requirement to explore other alternatives. For this purpose, the Korean technology behemoth has proposed a ‘Design and Process Integration Optimization’ (DTCO) method, which researches modifications that can be applied to bolster the prowess of cutting-edge nodes. One area that Samsung has improved upon is transitioning from FinFET to GAA structures, maximizing current control capabilities, and allowing for its 2nm node to introduce a [.].